BSP92P H6327

BSP92P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated -250 V 12 Ω -0.26 A PG-SOT223 Drain pin 2/4 • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21 4 Gate pin1 3 Source pin 3 2 1 VPS05163 Type Package Pb-free Tape and Reel Information Marking BSP92P PG-SOT223 Yes H6327: 1000 pcs/reel BSP92P Packaging Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.26 TA=70°C -0.23 ID puls -1.04 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.26A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature 55/150/56 IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Rev 2.7 Class 1a Page 1 2012-11-26 BSP92P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 - 80 115 - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -250 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-130µA Zero gate voltage drain current µA IDSS VDS =-250V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-250V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10 20 Ω RDS(on) - 8.2 15 RDS(on) - 7.5 12 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-2.8V, ID =-0.025A Drain-source on-state resistance VGS =-4.5V, ID =-0.23A Drain-source on-state resistance VGS =-10V, ID =-0.26A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.7 Page 2 2012-11-26 BSP92P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.29 0.57 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.23A Input capacitance Ciss VGS =0, VDS =-25V, - 83 104 Output capacitance Coss f=1MHz - 13 16 Reverse transfer capacitance Crss - 6 8 Turn-on delay time td(on) VDD =-125V, VGS =-10V, - 5 8 Rise time tr ID =-0.26A, RG=6Ω - 6 9 Turn-off delay time td(off) - 67 101 Fall time tf - 33 50 - -0.1 - -1.9 -2.4 - -4.3 -5.4 V(plateau) VDD =-200V, ID=-0.26A - -2.9 -3.6 IS - - -0.26 A - - -1.04 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-200V, ID=-0.26A VDD =-200V, ID=-0.26A, -0.13 nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.26A - -0.83 Reverse recovery time trr VR =-125V, IF =lS , - 51 64 ns Reverse recovery charge Qrr diF /dt=100A/µs - 76 95 nC Rev 2.7 Page 3 -1.21 V 2012-11-26 BSP92P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.9 BSP 92 P BSP 92 P -0.28 A W -0.24 1.6 -0.22 -0.2 1.2 ID Ptot 1.4 -0.18 -0.16 1 -0.14 -0.12 0.8 -0.1 0.6 -0.08 -0.06 0.4 -0.04 0.2 -0.02 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 160 °C TA 1 BSP 92 P 10 2 A BSP 92 P K/W tp = 110.0µs 10 1 Z thJA ID -10 0 /I D 1 ms DS 10 ms 10 0 = V -10 -1 on ) D = 0.50 R DS ( 0.20 0.10 single pulse -10 -2 0.05 10 -1 0.02 DC 0.01 -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 VDS Rev 2.7 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2012-11-26 4 BSP92P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 1 0.8 -I D 0.7 0.6 0.5 Ω 10V 6V 5V 4.6V 4.2V 3.6V 3.4V 3.2V 2.8V 2.6V 2.6V 2.8V 3.2V 14 RDSON A 18 12 10 8 0.4 10V 6V 5V 4.6V 4.2V 3.6V 3.4V 6 0.3 4 0.2 2 0.1 0 0 1 2 3 4 5 6 7 8 V 0 0 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 1 g fs -I D S 0.6 0.6 0.4 0.4 0.2 0.2 1 2 V 0 0 4 -VGS Rev 2.7 1 1 A 0 0 A -ID 0.2 0.4 0.6 A 1 -ID Page 5 2012-11-26 BSP92P 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.26 A, VGS = -10 V parameter: VGS = VDS ; ID = -130µA 32 BSP 92 P 2.2 Ω V - VGS(th) RDS(on) 98% 24 20 1.8 1.6 typ. 1.4 16 1.2 98% 12 1 8 typ 0.8 4 0 -60 2% 0.6 -20 20 60 100 °C 0.4 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 -10 1 pF BSP 92 P A Ciss -10 0 C IF 10 2 Coss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Crss Tj = 150 °C (98%) 10 0 0 6 12 18 24 V -10 -2 0 36 -VDS Rev 2.7 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2012-11-26 BSP92P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate ) V(BR)DSS = f (Tj ) parameter: ID = -0.26 A pulsed -16 BSP 92 P BSP 92 P -300 V V(BR)DSS V VGS -12 -10 -285 -280 -275 -270 -265 -8 20% -260 50% -255 -6 80% -250 -245 -4 -240 -235 -2 -230 0 0 1 2 3 4 5 nC -225 -60 6.5 |Q G| Rev 2.7 -20 20 60 100 °C 180 Tj Page 7 2012-11-26 BSP92P Rev 2.7 Page 8 2012-11-26